3D direct laser writing using a 405 nm diode laser

被引：65
|
作者：
Mueller, Patrick [1 ,2 ,3 ]
Thiel, Michael [2 ]
Wegener, Martin [1 ,3 ]
机构：
[1] Karlsruhe Inst Technol, Inst Nanotechnol, D-76128 Karlsruhe, Germany
[2] Nanoscribe GmbH, D-76344 Eggenstein Leopoldshafen, Germany
[3] Karlsruhe Inst Technol, Inst Appl Phys, D-76128 Karlsruhe, Germany
来源：
OPTICS LETTERS | 2014年 / 39卷 / 24期
关键词：
3-DIMENSIONAL MICROFABRICATION; MULTIPHOTON LITHOGRAPHY; OPTICAL LITHOGRAPHY; REPETITION-RATE; POLYMERIZATION; PHOTOPOLYMERIZATION; RESOLUTION;
D O I：
10.1364/OL.39.006847
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Three-dimensional (3D) direct laser writing commonly uses near-infrared femtosecond laser pulses. Here, we use a quasi-cw blue diode laser at a 405 nm wavelength. As prerequisite, we identify photoresist systems that unambiguously show nonlinear multiphoton polymerization at this excitation wavelength. Next, we obtain a diffraction-limited focus with a high-numerical-aperture objective lens (NA = 1.4), which is crucial to actually benefit from the wavelength advantage. To evaluate the anticipated reduced linewidths and improved resolution, we fabricate and characterize 2D and 3D benchmark structures. Finally, we also demonstrate dip-in direct laser writing with our setup. (C) 2014 Optical Society of America
引用
收藏
页码：6847 / 6850
页数：4
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