Coplanar integrated mixers for 77-GHz automotive applications

被引：10
|
作者：
Verweyen, L
Massler, H
Neumann, M
Schaper, U
Haydl, WH
机构：
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
[2] Siemens Corp Technol, D-81739 Munich, Germany
来源：
IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 01期
关键词：
D O I：
10.1109/75.650982
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For integration in receivers at 77 GHz, three passive mixers, a balanced diode mixer, a single ended and a balanced resistive mixer, as well as an active single-ended gate mixer have been realized in coplanar 0.15-mu m PM-HEMT technology on GaAs. The passive mixers achieved conversion losses of about 9 dB. The resistive mixers required an LO power of only 3 dBm and the diode mixer 10 dBm for optimum conversion, The gate mixer obtained a conversion gain of 1 dB for an LO power of 6 dBm, but showed higher sensitivity to the IF load.
引用
收藏
页码：38 / 40
页数：3
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