Preparation of pyrite thin films by atmospheric pressure chemical vapor deposition using FeCl3 and CH3CSNH2

被引：18
|
作者：
Takahashi, N [1 ]
Sawada, T [1 ]
Nakamura, T [1 ]
Nakamura, T [1 ]
机构：
[1] Shizuoka Univ, Fac Engn, Dept Mat Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2000年 / 10卷 / 10期
关键词：
D O I：
10.1039/b003015p
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A new vapor-phase deposition method using FeCl3 and CH3CSNH2 as starting materials has been examined for the growth of FeS2 films on glass substrates under atmospheric pressure. The X-ray diffractogram of the as-deposited films at 773 K showed a typical cubic pyrite pattern. The growth rate was approximately 8.4 mu m h(-1) at 773 K. The resulting films have a carrier concentration of 6.5 x 10(18) cm(-3) and a Hall mobility of 20 cm(2) V-1 s(-1) at 298 K.
引用
收藏
页码：2346 / 2348
页数：3
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