Preparation and characterization of MgTiO3 thin films by atmospheric pressure metalorganic chemical vapor deposition

被引:24
|
作者
Zeng, JM
Wang, H
Song, SG
Zhang, Q
Cheng, JG
Shang, SX
Wang, M
Wang, Z
Lin, CL
机构
[1] SHANDONG UNIV,NATL LAB CRYSTAL MAT,JINAN 250100,PEOPLES R CHINA
[2] SHANDONG UNIV,EXPT CTR,JINAN 250100,PEOPLES R CHINA
关键词
APMOCVD; ilmenite titanate; MgTiO3 thin film; high Q value; absorption edge; cross-correlation method;
D O I
10.1016/S0022-0248(96)01177-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We report here for the first time, preparation of the ilmenite titanate MgTiO3 thin films on Si and SrTiO3 substrates by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) technique. Magnesium acetylacetonate [Mg(acac)(2)] and titanium isopropoxide [TIP] were used as the Mg and Ti precursors, and O-2 was the oxidizing gas. The deposited films were investigated using scanning electron microscopy, X-ray energy dispersion analysis and X-ray diffraction technique. The experimental results showed that the films deposited on silicon substrate were single-phase randomly oriented MgTiO3, and on SrTiO3 substrate, only a (012) orientation was observed. The MgTiO3 films, prepared on SrTiO3(100) substrates at a growth temperature of 650 degrees C, were transparent in the visible and exhibited a sharp absorption edge at 380 nm in the ultraviolet. The birefringence of the MgTiO3 films was also measured at room temperature by the cross-correlation method.
引用
收藏
页码:355 / 359
页数:5
相关论文
共 50 条
  • [1] MgTiO3 thin films prepared by metalorganic solution deposition and their properties
    Choi, YH
    Lee, J
    THIN SOLID FILMS, 2001, 385 (1-2) : 43 - 47
  • [2] Preparation and ferroelectric properties of BaTiO3 thin films by atmospheric-pressure metalorganic chemical vapor deposition
    Zeng, JM
    Wang, H
    Wang, M
    Shang, SX
    Wang, Z
    Lin, CL
    THIN SOLID FILMS, 1998, 322 (1-2) : 104 - 107
  • [3] Preparation and characterization of epitaxial MgO thin film by atmospheric-pressure metalorganic chemical vapor deposition
    Zeng, JM
    Wang, H
    Shang, SX
    Wang, Z
    Wang, M
    JOURNAL OF CRYSTAL GROWTH, 1996, 169 (03) : 474 - 479
  • [4] Preparation and characterization of RuOx thin films by liquid delivery metalorganic chemical vapor deposition
    Kim, KW
    Kam, NS
    Lee, HG
    Kim, YS
    Kang, HJ
    Park, JC
    Joung, YH
    Kang, SJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (5A): : 2667 - 2671
  • [5] Preparation of Al-doped PbTiO3 thin films by metalorganic chemical vapor deposition and their characterization
    Aratani, Masanori
    Nagashima, Kuniharu
    Iijima, Takashi
    Mizuhira, Manabu
    Funakubo, Hiroshi
    2000, JJAP, Tokyo, Japan (39):
  • [6] Preparation and characterization of Pb(Nb,Ti)O3 thin films by metalorganic chemical vapor deposition
    Matsuzaki, T
    Funakubo, H
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) : 4559 - 4564
  • [7] Preparation of Al-doped PbTiO3 thin films by metalorganic chemical vapor deposition and their characterization
    Aratani, M
    Nagashima, K
    Iijima, T
    Mizuhira, M
    Funakubo, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (6A): : 3591 - 3595
  • [8] PREPARATION AND CHARACTERIZATION OF ZNS THIN-FILMS PRODUCED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    SMITH, PB
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1451 - 1455
  • [9] Preparation of Pt thin films deposited by metalorganic chemical vapor deposition for ferroelectric thin films
    Kwon, JH
    Yoon, SG
    THIN SOLID FILMS, 1997, 303 (1-2) : 136 - 142
  • [10] Preparation of ZnSe thin films by metalorganic chemical vapor deposition using NF3
    Ishikawa, T
    Yamabe, M
    Hara, Y
    Noda, Y
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1996, 60 (10) : 988 - 992