Physical and electrical characterization of WN Schottky contacts on 4H-SiC

被引：6
|
作者：
Noblanc, O
Arnodo, C
Cassette, S
Brylinski, C
Kakanakova-Georgieva, A
Marinova, T
Kassamakova, L
Kakanakov, R
Pecz, B
Sulyok, A
Radnoczi, G
机构：
[1] Thomson CSF, LCR, F-91404 Orsay, France
[2] Bulgarian Acad Sci, IGIC, BG-1113 Sofia, Bulgaria
[3] Inst Appl Phys, BG-4000 Plovdiv, Bulgaria
[4] Hungarian Acad Sci, RITP, H-1325 Budapest, Hungary
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
WN; Schottky rectifier; TEM; XPS;
D O I：
10.4028/www.scientific.net/MSF.264-268.817
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
WN has been deposited by reactive sputtering on 4H-SiC to make Schottky rectifiers. The physical properties of the interface have I,een studied by XPS and TEM for as-deposited, 800 and 1200 degrees C annealed samples. The two former. samples reveal steep interface with a metallic layer made of W and W2N phases. No dissociation of the SiC is evidenced in these conditions. In the later one, tungsten silicide and tungsten carbide are evidenced. The rectifying properties are studied by I(V) measurements. Barrier height of 0.94 eV is measured for annealed samples up to 950 degrees C and thermal stability is observed up to 350 degrees C.
引用
收藏
页码：817 / 820
页数：4
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