Properties of crystalline γ-TeO2 thin film

被引：36
|
作者：
Dewan, Namrata [1 ]
Sreenivas, K. [1 ]
Gupta, Vinay [1 ]
机构：
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 305卷 / 01期
关键词：
crystal structure; post-deposition annealing; sputtering; oxides;
D O I：
10.1016/j.jcrysgro.2007.03.054
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Thin films of tellurium dioxide (TeO2) were prepared by RE diode sputtering at room temperature (RT). The effects of post-deposition annealing in temperature range RT to 400 degrees C on the structural and optical properties of the deposited thin films were studied. The films were characterized using X-ray diffraction, infrared (IR) absorption spectroscopy, Raman spectroscopy and ultraviolet-visible (UV-vis) transmittance measurement. The as-deposited thin films are amorphous and become crystalline after a post-deposition annealing temperature of 400 degrees C. IR spectroscopy reveals the formation of Te-O bond. Raman spectroscopy depicts the formation TeO4 disphenoid for as-deposited TeO2 films. The phonon modes were found to shift towards low frequency along with the appearance of an additional sharp mode after post-deposition annealing, indicating the formation of crystalline TeO2 thin film in gamma-phase. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：237 / 241
页数：5
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