Domain engineering of physical vapor deposited two-dimensional materials

被引：15

作者：

Alam, Tarek ^{[1
]}

Wang, Baoming ^{[1
]}

Pulavarthy, Raghu ^{[1
]}

Haque, M. A. ^{[1
]}

Muratore, Christopher ^{[2
]}

Glavin, Nicholas ^{[3
]}

Roy, Ajit K. ^{[3
]}

Voevodin, Andrey A. ^{[3
]}

机构：

[1] Penn State Univ, Dept Mech & Nucl Engn, University Pk, PA 16802 USA

[2] Univ Dayton, Dept Chem & Mat Engn, Kettering Labs, Dayton, OH 45469 USA

[3] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 21期

基金：

美国国家科学基金会;

关键词：

BORON-NITRIDE FILMS; GRAIN-BOUNDARIES; EXFOLIATED MOS2; ATOMIC LAYERS; LARGE-AREA; GROWTH;

D O I：

10.1063/1.4902937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Physical vapor deposited two-dimensional (2D) materials span larger areas compared to exfoliated flakes, but suffer from very small grain or domain sizes. In this letter, we fabricate freestanding molybdenum disulfide (MoS2) and amorphous boron nitride (BN) specimens to expose both surfaces. We performed in situ heating in a transmission electron microscope to observe the domain restructuring in real time. The freestanding MoS2 specimens showed up to 100x increase in domain size, while the amorphous BN transformed in to polycrystalline hexagonal BN (h-BN) at temperatures around 600 degrees C much lower than the 850-1000 degrees C range cited in the literature. (c) 2014 AIP Publishing LLC.

引用

页数：5

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