Resolution enhancement techniques and mask manufacturability for sub-wavelength lithography

被引：2
|
作者：
Karklin, L [1 ]
Lin, BJ [1 ]
机构：
[1] Numer Technol Inc, San Jose, CA 95134 USA
来源：
PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VII | 2000年 / 4066卷
关键词：
photomasks; resolution enhancement techniques; optical proximity correction; subresolution assist; off-axis illumination; phase shifting masks; mask error factor; and process windows;
D O I：
10.1117/12.392103
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper analyzes two resolution enhancement techniques: alternating (strong) PSM and sub-resolution assists (scattering bars) from the point of view of their applicability to manufacturing of integrated circuits (IC) of 130 nm and below.
引用
收藏
页码：40 / 46
页数：7
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