A Two-Dimensional Electron Gas in Donor-Acceptor Doped Backward Heterostructures

被引：0
|
作者：
Pashkovskii, A. B. [1 ]
Novikov, S. I. [1 ]
Lapin, V. G. [1 ]
Lukashin, V. M. [1 ]
机构：
[1] ISTOK Res & Prod Corp, Fryazino 141190, Moscow Oblast, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2017年 / 43卷 / 06期
关键词：
FIELD-EFFECT TRANSISTORS; POWER; HETEROJUNCTIONS; AMPLIFIER;
D O I：
10.1134/S1063785017060232
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is characterized by (i) an energy difference between dimensional quantization levels that is several times the optical phonon energy in GaAs and (ii) increased linearity of transfer characteristics.
引用
收藏
页码：562 / 566
页数：5
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