Microstructural evolution of laser-exposed silicon targets in SF6 atmospheres

被引:47
|
作者
Fowlkes, JD [1 ]
Pedraza, AJ
Lowndes, DH
机构
[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
关键词
D O I
10.1063/1.1308538
中图分类号
O59 [应用物理学];
学科分类号
摘要
The microstructures formed at the surface of silicon during pulsed-laser irradiation in SF6-rich atmospheres consist of an array of microholes surrounded by microcones. It is shown that there is a dynamic interplay between the formation of microholes and microcones. Fluorine produced by the laser-induced decomposition of SF6 is most likely responsible for the etching/ablation process. It is proposed that silicon-rich molecules and clusters that form in and are ejected from the continually deepening microholes sustain the axial and lateral growth of the microcones. The laser-melted layer at the tip and sides of the cones efficiently collects the silicon-rich products formed upon ablation. The total and partial pressures of SF6 in the chamber play a major role in cone development, a clear indication that it is the laser-generated plasma that controls the growth of these cones. (C) 2000 American Institute of Physics. [S0003-6951(00)01637-5].
引用
收藏
页码:1629 / 1631
页数:3
相关论文
共 50 条
  • [41] LASER-INDUCED PREDISSOCIATION OF SF6 CLUSTERS
    GERAEDTS, J
    SETIADI, S
    STOLTE, S
    REUSS, J
    CHEMICAL PHYSICS LETTERS, 1981, 78 (02) : 277 - 282
  • [42] BICOLOR LASER PHOTOEXCITATION OF NO IN SF6 SENSITIZED SYSTEM
    DESON, J
    LALO, C
    MASANET, J
    DEMALEISSYE, JT
    CHEMICAL PHYSICS, 1988, 119 (2-3) : 343 - 353
  • [43] ETCHING OF SILICON BY SF6 INDUCED BY ION-BOMBARDMENT
    OOSTRA, DJ
    HARING, A
    DEVRIES, AE
    SANDERS, FHM
    VANVEEN, GNA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3): : 556 - 560
  • [44] Silicon etching employing negative ion in SF6 plasma
    Shindo, Haruo, 1600, JJAP, Minato-ku, Japan (34):
  • [45] PARTICLE CONTAMINATION ON A SILICON SUBSTRATE IN A SF6/AR PLASMA
    SMADI, MM
    KONG, GY
    CARLILE, RN
    BECK, SE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (01): : 30 - 36
  • [46] MULTIPLE PHOTON EXCITED SF6 INTERACTION WITH SILICON SURFACES
    CHUANG, TJ
    JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (02): : 1453 - 1460
  • [47] ENHANCED ETCHING OF SILICON IN SF6 PLASMA WITH DC BIAS
    FUNG, CD
    TUNG, CY
    KO, WH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C312 - C312
  • [48] SILICON ETCHING WITH A HOT SF6 MOLECULAR-BEAM
    SUZUKI, K
    NINOMIYA, K
    NISHIMATSU, S
    OKADA, O
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1605 - 1606
  • [49] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON
    EISELE, KM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126
  • [50] Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas
    Meyer, T.
    LeDain, G.
    Girard, A.
    Rhallabi, A.
    Bouska, M.
    Nemec, P.
    Nazabal, V
    Cardinaud, C.
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2020, 29 (10):