The self-formation graded diffusion barrier of Zr/ZrN

被引：8

作者：

Song, Z. X. ^{[1
]}

Wang, J. A. ^{[1
]}

Li, Y. H. ^{[1
]}

Ma, F. ^{[1
]}

Xu, K. W. ^{[1
]}

Guo, S. W. ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 03期

关键词：

Self-formation; Diffusion barrier; Thermal stability; COPPER; METALLIZATION; FILMS;

D O I：

10.1016/j.mee.2009.07.028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the 5 nm ZrN diffusion barrier was deposited by high vacuum magnetron sputtering method on Si substrate and the 300 nm Cu(Zr) alloy film or Cu film was sputtered on ZrN barrier without break vacuum. The self-formation graded Zr/ZrN diffusion barrier was obtained by annealing Cu(Zr)/ZrN bilayer system in N-2/H-2 (10% H-2) atmosphere. The X-ray diffraction (XRD) and four-point probe method were used to study graded Zr/ZrN diffusion barrier. The results revealed that the self-formation Zr barrier and ZrN barrier all obviously improved the thermal stability of Cu/Si system. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：391 / 393

页数：3

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