Thermal a Modeling, Analysis, and Management of High-Power GaN Transistors

被引：0

作者：

Zhao, Wen-Sheng ^{[1
]}

Li, Sen-Sen ^{[1
]}

Zhang, Rui ^{[1
]}

Yin, Wen-Yan ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab MOI, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China

来源：

2013 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS) | 2013年

关键词：

High-power GaN transistor; themral circuit model; graphene thermal management;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thermal circuit model for high power GaN transistor is constructed in this paper. Based on this model, the temperature rise in GaN transistor can be fast captured accurately. Further, the graphene layer is inserted below GaN layer to serve as heat spreader. It has been demonstrated that by introducing graphene layer, the maximum temperature rise of GaN transistor can be effectively suppressed, and its performance and reliability can be thereby improved.

引用

页码：241 / 244

页数：4

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