Fabrication of ZnO thin films by femtosecond pulsed laser deposition

被引：22

作者：

Chau, Joseph Lik Hang ^{[1
]}

Yang, Min-Chieh ^{[2
]}

Nakamura, Takahiro ^{[3
]}

Sato, Shunichi ^{[3
]}

Yang, Chih-Chao ^{[1
]}

Cheng, Chung-Wei ^{[2
]}

机构：

[1] Ind Technol Res Inst, ITRI S, Nanopowder & Thin Film Technol Ctr, Tainan, Taiwan

[2] Ind Technol Res Inst, ITRI S, Laser Applicat & Technol Ctr, Tainan, Taiwan

[3] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 980, Japan

来源：

OPTICS AND LASER TECHNOLOGY | 2010年 / 42卷 / 08期

关键词：

Femtosecond; Zinc oxide; Thin films; TEMPERATURE; HYDROGEN;

D O I：

10.1016/j.optlastec.2010.04.015

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The growth of ZnO thin films on sapphire substrate using the femtosecond PLD technique is reported. The effect of substrate temperature and oxygen pressure on the structural properties of the films was studied. Highly c-axis oriented ZnO films can be grown on sapphire substrates under vacuum conditions using the femtosecond PLD process. There is an optimum substrate temperature for the pulsed laser deposition of ZnO film that enhances the thermodynamic stability and allows the formation of well-crystallized thin films. The crystal quality of the films can be further improved by increasing the deposition time and introducing oxygen during the pulsed laser deposition process. (c) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1337 / 1339

页数：3

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