Ion-assisted diamond nucleation and growth

被引：0

作者：

Lee, ST ^{[1
]}

Zhang, RQ ^{[1
]}

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

来源：

DIAMOND MATERIALS VI | 2000年 / 99卷 / 32期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Diamond nucleation and growth have been studied using ion beam deposition in combination with hot filament chemical vapor deposition (HFCVD), or bias-enhanced microwave plasma chemical vapor deposition (MPCVD). The results led to a better understanding about the role of bias-induced bombardment of the substrate by positive ions and thus the effects of the negative bias in promoting diamond nucleation and heteroepitaxy. An electron cyclotron resonance (ECR) assisted MPCVD has been consequently designed and shown to be an alternative method for the uniform nucleation of diamond over a large area.

引用

页码：1 / 11

页数：11

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