Epitaxial CuO thin films prepared on MgAl2O4 (110) by RF-plasma assisted pulsed laser deposition

被引：6
|
作者：
Liu, Xiaohui [1 ,2 ]
Xu, Weidong [1 ,2 ]
Xu, Meng [1 ,2 ]
Hao, Xiaotao [3 ]
Feng, Xianjin [1 ,2 ]
机构：
[1] Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
[2] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
[3] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China
来源：
VACUUM | 2019年 / 169卷
基金：
中国国家自然科学基金;
关键词：
CuO; PLD; Epitaxial; Oxygen plasma pressure; PHOTOELECTROCHEMICAL PROPERTIES; THERMOCHROMIC VO2; CONTAMINATION; FABRICATION; MECHANISM; PRESSURE; GROWTH;
D O I：
10.1016/j.vacuum.2019.108932
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CuO films were deposited on MgAl2O4 (110) substrates by pulsed laser deposition. The structural and optical properties of the films prepared at different oxygen plasma pressures were investigated. The film prepared at 0.2 Pa was pure CuO having the best film crystallinity and an out-of-plane epitaxial relationship of CuO (010)parallel to MgAl2O4 (110). Two different kinds of domain structure were observed for the 0.2 Pa-deposited sample and the corresponding in-plane epitaxial relationships were deduced to be CuO [10]parallel to MgAl2O4 [001] and CuO [101]parallel to MgAl2O4 [001]. A schematic diagram was proposed to clarify the growth mechanism. The optical band gap of the as-prepared copper oxide films varied from 1.14 to 1.47eV. Our study indicates the feasibility of epitaxial growth of monoclinic CuO films on cubic MgAl2O4 substrates.
引用
收藏
页数：6
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