4.2mW GaInNAs long-wavelength VCSEL grown by metalorganic chemical vapor deposition

被引：0
|
作者：
Nishida, T [1 ]
Takaya, M [1 ]
Kakinuma, S [1 ]
Kaneko, T [1 ]
Shimoda, T [1 ]
机构：
[1] Seiko Epson Corp, Nagano 3990293, Japan
来源：
2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2004年
关键词：
D O I：
10.1109/ISLC.2004.1382761
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We achieved high output power GaInNAs verticalcavity surface-emitting lasers (VCSELs) emitting at 1261.5nm. The continuous wave (CW) output power at room temperature reached to 4.2mW with the slope efficiency of 0.52W/A.
引用
下载
收藏
页码：73 / 74
页数：2
相关论文
共 50 条
  • [1] 4.2-mW GaInNAs long-wavelength VCSEL grown by metalorganic chemical vapor deposition
    Nishida, T
    Takaya, M
    Kakinuma, S
    Kaneko, T
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (05) : 958 - 961
  • [2] 3.0mW GaInNAs long-wavelength vertical-cavity surface-emitting laser grown by metalorganic chemical vapor deposition
    Nishida, T
    Takaya, M
    Kakinuma, S
    Kaneko, T
    Shimoda, T
    VERTICAL-CAVITY SURFACE-EMITTING LASERS VIII, 2004, 5364 : 166 - 173
  • [3] Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes
    Sato, S
    Satoh, S
    JOURNAL OF CRYSTAL GROWTH, 1998, 192 (3-4) : 381 - 385
  • [4] Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition
    Chen, IL
    Hsu, WC
    Kuo, HC
    Yu, HC
    Sung, CP
    Lu, CM
    Chiou, CH
    Wang, JM
    Chang, YH
    Lee, TD
    Wang, JS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10): : 7485 - 7487
  • [5] Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition
    Noh, MS
    Dupuis, RD
    Bour, DP
    Walter, G
    Holonyak, N
    APPLIED PHYSICS LETTERS, 2003, 83 (13) : 2530 - 2532
  • [6] The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition
    Saito, A
    Miyamoto, T
    Kawaguchi, M
    Koyama, F
    2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 56 - 59
  • [7] Optical quality dependence on growth rate for metalorganic chemical vapor deposition grown GaInNAs/GaAs
    Kawaguchi, Masao, 1600, JJAP, Tokyo (39):
  • [8] Optical quality dependence on growth rate for metalorganic chemical vapor deposition grown GaInNAs/GaAs
    Kawaguchi, M
    Miyamoto, T
    Gouardes, E
    Schlenker, D
    Kondo, T
    Koyama, F
    Iga, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (12A): : L1219 - L1220
  • [9] Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition
    Kawaguchi, Masao
    Miyamoto, Tomoyuki
    Gouardes, Eric
    Schlenker, Dietmar
    Kondo, Takashi
    Koyama, Fumio
    Iga, Kenichi
    Japanese Journal of Applied Physics, Part 2: Letters, 2001, 40 (7 B):
  • [10] Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition
    Kawaguchi, M
    Miyamoto, T
    Gouardes, E
    Schlenker, D
    Kondo, T
    Koyama, F
    Iga, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (7B): : L744 - L746
12345