A Crosstalk-immune Sub-THz All-surface-wave I/O Transceiver in 65-nm CMOS

被引:0
|
作者
Liang, Yuan [1 ,2 ]
Boon, Chirn Chye [1 ]
Yu, Hao [3 ]
机构
[1] Nanyang Technol Univ, Singapore 639798, Singapore
[2] Innovat High Performance Microelect, IHP, D-15236 Frankfurt, Germany
[3] Southern Univ Sci & Technol, Shenzhen 518055, Peoples R China
关键词
CMOS oscillator; Terahertzes; surface plasmonic wave; crosstalk; split ring resonator; modulator; coupled oscillator network; I/O transceiver; OUTPUT POWER; TUNING RANGE; INTERCONNECT; VCO;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A surface-wave I/O transceiver is proposed and validated at 140 GHz in 65 nm CMOS. By generating, modulating and propagating surface plasmonic signal, the all-surface-wave I/O is prototyped with crosstalk-immune owning to the sub-wavelength localization of electromagnetic wave at the metal/dielectric interface. A four-way surface-wave signal source is power-combined via coupled oscillator network. A surface-wave modulator is realized by stacking two split-ring-resonator (SRR) unit-cells with opposite placement. It is further integrated into the all-surface-wave I/O with a surface-wave transmission line and matching converter. Measured results show that the proposed dual-channel I/O delivers a localized 140 GHz surface-wave signal, demonstrating crosstalk-immune on-chip transmission by supporting 13.5 Gb/s data-rate communication with 2.6 pJ/bit power efficiency and a bit-error rate less than 10(-12).
引用
收藏
页码:352 / 355
页数:4
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