Ambipolar thin-film transistors with a co-planar channel geometry

被引：3

作者：

Kim, J. B. ^{[1
]}

Fuentes-Hernandez, C. ^{[1
]}

Kim, S. -J. ^{[1
]}

Potscavage, W. J., Jr. ^{[1
]}

Choi, S. ^{[1
]}

Kippelen, B. ^{[1
]}

机构：

[1] Georgia Inst Technol, COPE, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 08期

基金：

美国国家科学基金会;

关键词：

Thin-film transistors; Complementary-like inverter; Pentacene; Metal-oxide semiconductors; Organic; Indium gallium zinc oxide; OXIDE; TRANSPORT;

D O I：

10.1016/j.orgel.2010.05.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on ambipolar thin-film transistors (ATFTs) that use a co-planar channel geometry to achieve balanced ambipolar operation. Using this geometry, we demonstrate hybrid organic-inorganic high performance ATFTs consisting of amorphous-InGaZnO (mobility of 10 cm(2)/Vs) and pentacene channels (mobility of 0.3 cm(2)/Vs) with performance parameters comparable to those of unipolar TFTs fabricated from these same semiconductors. A key characteristic of this co-planar channel ATFT geometry is that the onset of ambipolar operation is mediated by a new operating regime where one of the channels can reach saturation while the other channel remains off. This allows these ATFTs to reach high on-off current ratios approaching 10(4) at 5 V, close to the saturation regime. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1351 / 1356

页数：6

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