Mechanical properties of hydrogenated nanocrystalline silicon thin film studied by finite element method

被引：0
|
作者：
Wang, X. [1 ]
Wang, J. [1 ]
Yang, S. [2 ]
机构：
[1] Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100191, Peoples R China
[2] Beihang Univ, Sch Transportat Sci & Engn, Internal Combust Engine Engn Dept, Beijing 100191, Peoples R China
来源：
MATERIALS RESEARCH INNOVATIONS | 2014年 / 18卷
关键词：
Finite element method; Mechanical properties; Hydrogenated nanocrystalline silicon thin; CHEMICAL-VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; SOLAR-CELLS; NANOINDENTATION; SIMULATION; LAYER;
D O I：
10.1179/1432891714Z.000000000871
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this research, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by using plasma enhanced chemical vapour deposition system. The finite element model of nanoindentation was established to simulate the mechanical properties of a nc-Si: H thin film. By comparing numerical simulation data with experimental data, the correctness of the model was validated. The mechanical properties of nc-Si: H thin films obtained were: Young's modulus of 45 GPa, yield stress of 4.5 MPa, Poisson's ratio of 0.3 and the hardness was calculated to be 2.5 GPa.
引用
收藏
页码：1017 / 1020
页数：4
相关论文
共 50 条
  • [31] Recombination mechanisms in hydrogenated silicon nanocrystalline thin films
    Saleh, Zaki M.
    Kmail, Salam M.
    Assaf, Samah F.
    Qasrawil, Atif F.
    TURKISH JOURNAL OF PHYSICS, 2013, 37 (03): : 283 - 288
  • [32] A SAXS Study of Hydrogenated Nanocrystalline Silicon Thin Films
    Kiriluk, K. G.
    Williamson, D. L.
    Bobela, D. C.
    Taylor, P. C.
    Yan, B.
    Yang, J.
    Guha, S.
    Madan, A.
    Zhu, F.
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010, 2010, 1245 : 271 - 275
  • [33] Optical Properties of Hydrogenated Amorphous Silicon Thin Film Deposited by PECVD
    Li, Yingge
    Du, Dongxing
    2010 INTERNATIONAL CONFERENCE ON INFORMATION, ELECTRONIC AND COMPUTER SCIENCE, VOLS 1-3, 2010, : 788 - +
  • [34] Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications
    1600, American Institute of Physics Inc. (114):
  • [35] Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications
    Mouro, J.
    Gualdino, A.
    Chu, V.
    Conde, J. P.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (18)
  • [36] A mixed finite element method for thin film epitaxy
    Wenbin Chen
    Yanqiu Wang
    Numerische Mathematik, 2012, 122 : 771 - 793
  • [37] A mixed finite element method for thin film epitaxy
    Chen, Wenbin
    Wang, Yanqiu
    NUMERISCHE MATHEMATIK, 2012, 122 (04) : 771 - 793
  • [38] Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application
    Shin, Kyung-Wook
    Esmaeili-Rad, Mohammad R.
    Sazonov, Andrei
    Nathan, Arokia
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008, 2008, 1066 : 379 - +
  • [39] Nanocrystalline silicon thin film transistors
    Cheng, IC
    Wagner, S
    IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2003, 150 (04): : 339 - 344
  • [40] Nanocrystalline Silicon Thin Film Transistors
    Rad, M. R. E.
    Chaji, G. R.
    Lee, C. -H.
    Striakhilev, D.
    Sazonov, A.
    Nathan, A.
    THIN FILM TRANSISTORS 10 (TFT 10), 2010, 33 (05): : 205 - 212
12345