Mechanical properties of hydrogenated nanocrystalline silicon thin film studied by finite element method

被引：0
|
作者：
Wang, X. [1 ]
Wang, J. [1 ]
Yang, S. [2 ]
机构：
[1] Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100191, Peoples R China
[2] Beihang Univ, Sch Transportat Sci & Engn, Internal Combust Engine Engn Dept, Beijing 100191, Peoples R China
来源：
MATERIALS RESEARCH INNOVATIONS | 2014年 / 18卷
关键词：
Finite element method; Mechanical properties; Hydrogenated nanocrystalline silicon thin; CHEMICAL-VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; SOLAR-CELLS; NANOINDENTATION; SIMULATION; LAYER;
D O I：
10.1179/1432891714Z.000000000871
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this research, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by using plasma enhanced chemical vapour deposition system. The finite element model of nanoindentation was established to simulate the mechanical properties of a nc-Si: H thin film. By comparing numerical simulation data with experimental data, the correctness of the model was validated. The mechanical properties of nc-Si: H thin films obtained were: Young's modulus of 45 GPa, yield stress of 4.5 MPa, Poisson's ratio of 0.3 and the hardness was calculated to be 2.5 GPa.
引用
收藏
页码：1017 / 1020
页数：4
相关论文
共 50 条
  • [1] Mechanical properties of hydrogenated nanocrystalline silicon thin film with different indentation depths
    Guo, Liqiang
    Ding, Jianning
    Yang, Jichang
    Cheng, Guanggui
    Ling, Zhiyong
    SURFACE AND INTERFACE ANALYSIS, 2012, 44 (03) : 265 - 269
  • [2] Photocurrent of hydrogenated nanocrystalline silicon thin film/crystalline silicon heterostructure
    Zhang, R.
    Chen, X. Y.
    Lu, J. J.
    Shen, W. Z.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (12)
  • [3] Stability of hydrogenated nanocrystalline silicon thin-film transistors
    Orpella, A
    Voz, C
    Puigdollers, J
    Dosev, D
    Fonrodona, M
    Soler, D
    Bertomeu, J
    Asensi, JM
    Andreu, J
    Alcubilla, R
    THIN SOLID FILMS, 2001, 395 (1-2) : 335 - 338
  • [4] Hydrogenated nanocrystalline silicon thin films studied by scanning force microscopy
    Cavalcoli, D.
    Rossi, M.
    Tornasi, A.
    Cavallini, A.
    Chrastina, D.
    Isella, G.
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, 2008, 131-133 : 547 - +
  • [5] Optoelectronic properties of hydrogenated nanocrystalline silicon thin films
    Zhang, Rong (rongzhang@shmtu.edu.cn), 2018, National Institute of Optoelectronics (12): : 9 - 10
  • [6] Optoelectronic properties of hydrogenated nanocrystalline silicon thin films
    Zhang, Rong
    Chen, Xinyi
    Shen, Wenzhong
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2018, 12 (9-10): : 559 - 562
  • [7] Effects of dopants on the mechanical properties of nanocrystalline silicon carbide thin film
    Xiong, Liming
    Chen, Youping
    CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES, 2008, 24 (2-3): : 203 - 213
  • [8] Inverse method to determine mechanical properties of thin film by nanoindentation and finite element analysis
    Baek, Dong-Cheon
    Lee, Soon-Bok
    Experimental Mechanics in Nano and Biotechnology, Pts 1 and 2, 2006, 326-328 : 219 - 222
  • [9] Capacitance analyses of hydrogenated nanocrystalline silicon based thin film transistor
    Anutgan, Tamila
    Anutgan, Mustafa
    Atilgan, Ismail
    Katircioglu, Bayram
    THIN SOLID FILMS, 2011, 519 (11) : 3914 - 3921
  • [10] Hydrogenated nanocrystalline silicon thin films with promising thermoelectric properties
    Joana Loureiro
    Tiago Mateus
    Sergej Filonovich
    Marisa Ferreira
    Joana Figueira
    Alexandra Rodrigues
    Brian F. Donovan
    Patrick E. Hopkins
    Isabel Ferreira
    Applied Physics A, 2015, 120 : 1497 - 1502
12345