Femtosecond laser-induced damage in dielectrics

被引：0

作者：

Peng, YF ^{[1
]}

Wei, YL ^{[1
]}

Lv, ZH ^{[1
]}

机构：

[1] Henan Normal Univ, Coll Phys & Informat Engn, Xinxiang 453007, Peoples R China

来源：

OPTICA APPLICATA | 2004年 / 34卷 / 03期

关键词：

femtosecond laser; ablation mechanism; damage threshold; electron number density;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a new method to investigate the ablation phenomenon by a 100 fs, 1053 nm Gaussian laser pulse in fused silica and describe the different mechanisms of ablation in long pulse and ultrashort pulse lasers. A modified rate equation is used to numerically calculate damage in dielectrics. In addition, we examine the respective role of ionization and avalanche ionization in femtosecond laser-induced damage. We find that present results are in quantitative agreement with those of earlier study.

引用

页码：319 / 329

页数：11

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