A critical requirement for bit patterned media applications is the control and minimization of the switching field distribution (SFD). Here, we use the Delta H(M,Delta M) method to separate dipolar interactions due to neighbor islands from the intrinsic SFD by measuring a series of partial reversal curves of perpendicular anisotropy Co/Pd based multilayer films deposited onto prepatterned Si substrates. For a 100-nm-period island array the dipolar broadening contributes 22% to the observed SFD. For a 45-nm-period array this value increases to 31%. These results highlight the importance of quantifying long-range dipolar interactions for determining the intrinsic SFD of patterned media. (C) 2007 American Institute of Physics.
机构:
Key Laboratory of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819, ChinaKey Laboratory of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China
Xiao, Na
Li, Song
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Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang 110819, ChinaKey Laboratory of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China
Li, Song
Ren, Yu-Ping
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Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang 110819, ChinaKey Laboratory of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China
Ren, Yu-Ping
Qin, Gao-Wu
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Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang 110819, ChinaKey Laboratory of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China
机构:
Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, FranceUniv Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
Belmeguenai, M
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Devolder, T
Chappert, C
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Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, FranceUniv Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France