Effect of thermal oxidation on Si/SiO2 interface microroughness:: An atomic force microscopy (AFM) study

被引：0

作者：

Fang, SJ ^{[1
]}

Chen, W ^{[1
]}

Helms, CR ^{[1
]}

Yamanaka, T ^{[1
]}

机构：

[1] Stanford Univ, Solid State Lab, Stanford, CA 94305 USA

来源：

PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996 | 1996年 / 96卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Three groups of samples under different preparations are used to illustrate the effect sf thermal oxidation on Si/SiO2 interface roughness Two groups are roughened intentionally, and the other one is only treated with a regular pre-oxidation clean. In general, interface roughness is a strong function of oxide thickness. For samples of two intentionally roughened groups, interface roughness always decreases as oxide thickness increases, In contrast, samples only treated by a regular pre-oxidation dean demonstrate a different quantitative trend: Si/SiO2 interface is initially roughened and there becomes smooth as oxide thick-ness increases. This implies that the evolution of interface roughness is dependent on the sample preparation or the starting surface. Our results also suggest that oxidation ambient does not have a significant influence on Si/SiO2 interface roughness.

引用

页码：338 / 347

页数：10

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