Modeling and Comparative Study on the High Frequency and Noise Characteristics of different Polytypes of SiC- based IMPATTs

被引：7

作者：

Panda, A. K. ^{[1
]}

Rao, V. Malleswara ^{[2
]}

机构：

[1] Natl Inst Sci & Technol, Palur Hills, Berhampur 761008, Orissa, India

[2] Gitam Univ, Gitam Inst Technol, Visakhapatnam 530045, Andhra Pradesh, India

来源：

APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5 | 2009年

关键词：

High power; Noise; Oscillator; IMPATT Diodes; High frequency; GAN-BASED IMPATTS; DIODES;

D O I：

10.1109/APMC.2009.5384396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC-based IMPATTs with its different polytypes (3C, 4H, and 6H) are modeled, designed and a comparative study among three are presented in this paper to operate at D-band frequency at the same operating conditions and frequency of operations under static and dynamic conditions. A noise analysis model was also developed to compare the noise characteristics of 3C, 4H and 6H SiC-based IMPATTs. The results show that 3C-SiC based IMPATTs have better power delivery capability whereas 4H SiC-based IMPATTs are less noisy. Hence a noise-power trade-off method is used to determine the potential of each polytypes of SiC-based IMPATTs.

引用

页码：1569 / +

页数：2

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