Engineering of the dielectric-semiconductor interface in organic field-effect transistors

被引:150
|
作者
Sun, Xiangnan [1 ]
Di, Chong-an [1 ]
Liu, Yunqi [1 ]
机构
[1] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
THIN-FILM TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; GEL GATE DIELECTRICS; VAPOR-PHASE; POLY(3-HEXYLTHIOPHENE) TRANSISTORS; FLEXIBLE ELECTRONICS; CHARGE-TRANSPORT; CARRIER DENSITY; VOLTAGE SHIFT; GROWTH MODE;
D O I
10.1039/b921449f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
With the advances of organic field-effect transistors (OFETs), the interface between semiconductors and dielectrics has received much attention due to its dramatic effects on the morphology and charge-transport of organic semiconductors in OFETs. The purpose of this review is to give an overview of the recent progress in the engineering of the dielectric-semiconductor interface in OFETs. The interface-dependent performances of OFETs are reviewed, and interfacial control methods are especially dealt with an aim to solve interfacial effects. Finally, novel applications of the dielectric-semiconductor interface for achieving multifunctions are summarized to offer a clear map of interface engineering in OFETs.
引用
收藏
页码:2599 / 2611
页数:13
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