Hybrid graphene/organic semiconductor field-effect transistors

被引:29
|
作者
Ha, Tae-Jun [1 ]
Akinwande, Deji [1 ]
Dodabalapur, Ananth [1 ]
机构
[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
基金
美国国家科学基金会;
关键词
BAND-GAP;
D O I
10.1063/1.4737939
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, we report on the improvement of the electronic properties of graphene by capping with pi-conjugated organic semiconductor molecules. The off-state current is reduced while the on-state current and mobility are either unaffected or increased. The semiconductors employed included alpha-sexithiophene and hexadecafluorocopperphthallocyanine. Removal of the organic semiconductor layer results in a return to the original electronic properties. This suggests that weak electronic interactions with organic semiconductors can be a promising approach to favorably alter the transport properties of graphene. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737939]
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页数:3
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