Loss Analysis and Design Strategies Enabling >23% GaAsP/Si Tandem Solar Cells

被引：0
|
作者：
Lepkowski, Daniel L. [1 ]
Boyer, Jacob T. [1 ]
Yi, Chuqi [2 ]
Soeriyadi, Anastasia H. [2 ]
Blumer, Zak H. [1 ]
Juhl, Mattias K. [2 ]
Derkacs, Daniel [3 ]
Kerestes, Chris [3 ]
Stavrides, Alex [3 ]
Mehrvarz, Hamid [2 ]
Ho-Baillie, Anita W. Y. [2 ]
Bremner, Stephen [2 ]
Ringel, Steven A. [1 ]
Grassman, Tyler J. [1 ]
机构：
[1] Ohio State Univ, Columbus, OH 43210 USA
[2] Univ New South Wales, Sydney, NSW, Australia
[3] SolAero Technol Corp, Albuquerque, NM USA
来源：
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Detailed loss analysis of our previously reported 21.8% (unverified) monolithic GaAsP/Si tandem cells has identified and quantified three main mechanisms limiting cell performance: dislocation mediated voltage and current losses, improper bandgap profile, and insufficient rear passivation. This analysis was recently used to redesign the device structure, yielding a substantial performance improvement to 23.4% AM1.5G. The largest area of improvement was in the V-OC of 1.73V, an increase of 70 mV versus our previous results, enabled by an similar to 2x reduction in threading dislocation density (TDD) and a more ideal top cell bandgap.
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页码：1884 / 1886
页数：3
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