Toward >25% Efficient Monolithic Epitaxial GaAsP/Si Tandem Solar Cells

被引：0

作者：

Grassman, Tyler J. ^{[1
]}

Lepkowski, Daniel L. ^{[1
]}

Boyer, Jacob T. ^{[1
]}

Chmielewski, Daniel J. ^{[1
]}

Yi, Chuqi ^{[2
]}

Western, Ned ^{[2
]}

Mehrvarz, Hamid ^{[2
]}

Ho-Baillie, Anita ^{[2
]}

Kerestes, Christopher ^{[3
]}

Derkacs, Daniel ^{[3
]}

Whipple, Steven G. ^{[3
]}

Stavrides, Alex P. ^{[3
]}

Bremner, Stephen P. ^{[2
]}

Ringel, Steven A. ^{[1
]}

机构：

[1] Ohio State Univ, Columbus, OH 43210 USA

[2] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

[3] SolAero Technol Corp, Albuquerque, NM 87123 USA

来源：

2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2019年

关键词：

III-V semiconductor materials; Si; photovoltaic cells; semiconductor epitaxial layers;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report here on progress made in the development of >20% efficient monolithic epitaxial III-V/Si tandem solar cells. Following our prior demonstration of a GaAs0.75P0.25/Si tandem cell with verified AM1.5G efficiency of 20.1%, we have undertaken intensive efforts aimed at optimization of the top and bottom subcells, involving both materials quality improvement and detailed device structure refinement. To date we have thus demonstrated 21.8% AM1.5G GaAs0.75P0.25/Si tandem cells making use of an optimized, but still defect-limited GaAsP top cell combined with a simple diffusion-processed (emitter and back-surface field) Si bottom cell. With recent development of a low dislocation density III-V-on-Si epitaxial materials platform, as well as bottom cell enhancements for photon management, analytical performance loss analysis and efficiency projections indicate that >25% is achievable in the near-term, and 30% within reach with additional holistic optimization.

引用

页码：734 / 737

页数：4

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Toward &gt;25% Efficient Monolithic Epitaxial GaAsP/Si Tandem Solar Cells

Toward >25% Efficient Monolithic Epitaxial GaAsP/Si Tandem Solar Cells