Growth pressure dependence of residual strain and threading dislocations in the GaN layer

被引：4

作者：

Lee, SN ^{[1
]}

Son, JK ^{[1
]}

Paek, HS ^{[1
]}

Sakong, T ^{[1
]}

Lee, W ^{[1
]}

Kim, KH ^{[1
]}

Kim, SS ^{[1
]}

Lee, YJ ^{[1
]}

Noh, DY ^{[1
]}

Yoon, E ^{[1
]}

Nam, OH ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS | 2004年

关键词：

D O I：

10.1002/pssc.200405007

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the generation of threading dislocations (TDs) and the relaxation of the compressive strain in the GaN/sapphire (0001) grown by metalorganic chemical vapor deposition. With decreasing the growth pressure, the a-axis lattice constant of GaN film and the width of the (002) and the (101) rocking curve increases. This indicates that the density of TDs in GaN epilayers increases with the lattice constant a of GaN film. The fact that the width of the (101) rocking curves increases much more than that of the (002) rocking curve indicates that the residual strain in GaN on sapphire reduces mainly by generating the edge-type TDs.(C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2458 / 2461

页数：4

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