Effect of Neodymium doping on the structural, morphological, optical and electrical properties of copper oxide thin films

被引:16
|
作者
Prabu, R. David [1 ]
Valanarasu, S. [1 ]
Geno, H. A. Herisalin [2 ]
Christy, A. Jegatha [2 ]
Jeyadheepan, K. [3 ]
Kathalingam, A. [4 ]
机构
[1] Arul Anandar Coll, PG & Res Dept Phys, Madurai, Tamil Nadu, India
[2] Jeyaraj Annapackiam Coll Women, Dept Phys, Periyakulam, Theni, India
[3] SASTRA Univ, Sch Elect & Elect Engn, Thanjavur 613401, India
[4] Dongguk Univ, Millimeter Wave Innovat Technol Res Ctr MINT, Seoul 04620, South Korea
关键词
SPRAY-PYROLYSIS TECHNIQUE; CUPROUS-OXIDE; PHOTOLUMINESCENCE; EVAPORATION; DEPOSITION; CELLS;
D O I
10.1007/s10854-018-9170-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the present work un-doped and neodymium (Nd)-doped copper oxide thin films were deposited using nebulizer spray pyrolysis technique. The XRD pattern confirmed, the Cu2O phase for the films with cubic crystal structure. The calculated crystallite size of the Cu2O thin films are 36, 34, 28, and 23 nm respectively for 0, 1, 3 and 5% of Nd doping level. In 5% Nd doping the voids were reduced and the film showed high absorption in the visible region due to the maximum thickness. The band gap values are 2, 1.94, 1.87 and 1.82 eV for the 0, 1, 3 and 5% of Nd respectively. The emission peak at similar to 617 nm was observed for all the films in PL spectra which corresponds to copper impurity of the deposited films. The low resistivity about 0.85 x 10(2) a"broken vertical bar cm was found for the 5% Nd doped copper oxide thin film. The open circuit voltage (V-oc) was 0.39 V and short circuit current (I-sc) was 1.1641 x 10(-4) A for the 5% Nd doped Cu2O thin film.
引用
收藏
页码:10921 / 10932
页数:12
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