Fabrication of ordered InN nanowire arrays and their photoluminescence properties

被引：25

作者：

Zhang, J ^{[1
]}

Xu, BL ^{[1
]}

Jiang, FH ^{[1
]}

Yang, YD ^{[1
]}

Li, JP ^{[1
]}

机构：

[1] Yantai Univ, Dept Phys, Yantai 264005, Peoples R China

来源：

PHYSICS LETTERS A | 2005年 / 337卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

nanocrystalline materials; semiconductor; photoluminescence;

D O I：

10.1016/j.physleta.2005.01.048

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Semiconductor InN nanowire arrays were uniformly assembled into the hexagonally ordered nanochannels of anodic alumina membranes (AAM) through the direct reaction of indium and ammonia. The morphology and microstructures of sample were characterized by X-ray diffraction, scan electron microscopy, and transmission electron microscopy. A broad blue-green photoluminescence (PL) band in the wavelength range of 300-650 nm was observed from the InN nanowires assembly system (InN/AAM). A blue shift of the bandgap emission compared with that of bulk InN might be ascribed to the quantum confinement effect size and the interaction between the ordered InN nanowires and AAM. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：121 / 126

页数：6

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