Kelvin probe microscopy measurements of surface potential change under wear at low loads

被引:46
|
作者
Bhushan, B [1 ]
Goldade, AV [1 ]
机构
[1] Ohio State Univ, Dept Mech Engn, Comp Microtribol & Contaminat Lab, Columbus, OH 43210 USA
基金
美国国家科学基金会;
关键词
wear scratching; surface potential; atomic force microscopy; Kelvin probe microscopy;
D O I
10.1016/S0043-1648(00)00450-6
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Kelvin probe microscopy has been used to detect wear precursors at ultralow loads. Samples studied include single crystal silicon (100), single crystal silicon (100) lubricated with fully bonded Z-DOL (a perfluoropolyether), gold, aluminum and alumina. The effect of load and number of cycles on surface potential change under ultralow loads has been investigated. Influence of the scan parameters and the reproducibility of the experimental results have been studied. It is found that the measured change in surface potential is strongly affected by the scan parameters as well as the shape of the probe. Negative wear depth on single crystal silicon (100). and single crystal silicon (100) lubricated with fully bonded Z-DOL during early stages of sliding has been observed. (The scratched area was raised rather than depressed as compared to the unworn surrounding region.) Chemical analysis of unworn and worn regions of silicon and silicon lubricated with fully bonded Z-DOL was performed to reveal possible mechanisms of changes in surface potential. It is believed that the removal of a thin contaminant laver. natural oxide layer or lubricant during a few wear cycles gives rise to the initial change in surface potential. It is further believed that structural changes which precede generation of wear debris and/or measurable wear scars occur under ultralow loads in the top few nanometers of the sample, which are primarily responsible for the measured changes in surface potential. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:104 / 117
页数:14
相关论文
共 50 条
  • [41] Heterodyne AC Kelvin Probe Force Microscopy for Nanoscale Surface Potential Imaging in Liquids
    Hackl, Thomas
    Poik, Mathias
    Schitter, Georg
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2023, 72
  • [42] Surface potential imaging of CNT-FET devices by scanning Kelvin probe microscopy
    Hosoi, H.
    Nakamura, M.
    Yamada, Y.
    Sueoka, K.
    Mukasa, K.
    PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
  • [43] Surface Potential Analysis of Nanoscale Biomaterials and Devices Using Kelvin Probe Force Microscopy
    Lee, Hyungbeen
    Lee, Wonseok
    Lee, Jeong Hoon
    Yoon, Dae Sung
    JOURNAL OF NANOMATERIALS, 2016, 2016
  • [44] Intermittent bias application in Kelvin probe force microscopy for accurate determination of surface potential
    Ono, S
    Takahashi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3B): : 1931 - 1933
  • [45] Surface potential images of polycrystalline organic semiconductors obtained by Kelvin probe force microscopy
    Haichao Huang
    Haibo Wang
    Jidong Zhang
    Donghang Yan
    Applied Physics A, 2009, 95 : 125 - 130
  • [46] Potential profile measurement of cleaved surface of GaAs HEMTs by Kelvin probe force microscopy
    Mizutani, T
    Arakawa, M
    Kishimoto, S
    IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 31 - 34
  • [47] Heterodyne AC Kelvin Probe Force Microscopy for Nanoscale Surface Potential Imaging in Liquids
    Hackl, Thomas
    Poik, Mathias
    Schitter, Georg
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2023, 72
  • [48] Heterodyne AC Kelvin Probe Force Microscopy for Nanoscale Surface Potential Imaging in Liquids
    Hackl, Thomas
    Poik, Mathias
    Schitter, Georg
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2023, 72
  • [49] Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy
    Nakagami, K
    Ohno, Y
    Kishimoto, S
    Maezawa, K
    Mizutani, T
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 275 - 278
  • [50] Excluding Contact Electrification in Surface Potential Measurement Using Kelvin Probe Force Microscopy
    Li, Shengming
    Zhou, Yusheng
    Zi, Yunlong
    Zhang, Gong
    Wang, Zhong Lin
    ACS NANO, 2016, 10 (02) : 2528 - 2535