Study of microvoids in high-rate a-Si:H using positron annihilation

被引：0

作者：

Zou, X ^{[1
]}

Webb, DP ^{[1
]}

Lin, SH ^{[1
]}

Lam, YW ^{[1
]}

Chan, YC ^{[1
]}

Hu, YF ^{[1
]}

Beling, CD ^{[1
]}

Fung, S ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si:H thin films deposited by PECVD. By means of the slow positron beam Doppler broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature.

引用

页码：525 / 530

页数：6

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