Surface processes during heteroepitaxy of ZnSe on GaAs(111)A as observed by reflection high-energy electron diffraction

被引：10
|
作者：
Ohtake, A [1 ]
Miwa, S
Kuo, LH
Kimura, K
Yasuda, T
Jin, CG
Yao, T
机构：
[1] JRCAT, Tsukuba, Ibaraki 305, Japan
[2] Angstrom Technol Partnership, Tsukuba, Ibaraki 305, Japan
[3] NAIR, Tsukuba, Ibaraki 305, Japan
[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 980, Japan
来源：
PHYSICAL REVIEW B | 1997年 / 56卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.56.14909
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Reflection high-energy electron diffraction and (RHEED) and x-ray-photoelectron spectroscopy have been used to study dynamical growth processes of ZnSe on GaAs(111)A-(2x2). ZnSe heteroepitaxially grows in a biatomic layer-by-layer mode with the(111)A orientation, being accompanied by distinct RHEED intensity oscillations. The growth rate of ZnSe increases and decreases with increasing Se/Zn flux ratio and ZnSe film thickness, respectively. We have found a strong dependence of the growth rate on chemical composition of the growing ZnSe surface.
引用
收藏
页码：14909 / 14912
页数：4
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