Cooling of hot electrons in amorphous silicon

被引：1

作者：

Vanderhaghen, R ^{[1
]}

Hulin, D ^{[1
]}

Cuzeau, S ^{[1
]}

White, JO ^{[1
]}

机构：

[1] Ecole Polytech, Phys Interfaces & Couches Minces Lab, UPR A 258 CNRS, F-91128 Palaiseau, France

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of the cooling rate of hot carriers in amorphous silicon are made with a two-pump, one-probe technique. The experiment is simulated with a rate-equation model describing the energy transfer between a population of hot carriers and the lattice. An energy transfer rate proportional to the temperature difference is found to be consistent with the experimental data while an energy transfer independent of the temperature difference is not. This contrasts with the situation in crystalline silicon. The measured cooling rates are sufficient to explain the difficulty in observing avalanche effects in amorphous silicon.

引用

页码：245 / 250

页数：6

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