Cooling of hot electrons in amorphous silicon

被引：1

作者：

Vanderhaghen, R ^{[1
]}

Hulin, D ^{[1
]}

Cuzeau, S ^{[1
]}

White, JO ^{[1
]}

机构：

[1] Ecole Polytech, Phys Interfaces & Couches Minces Lab, UPR A 258 CNRS, F-91128 Palaiseau, France

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of the cooling rate of hot carriers in amorphous silicon are made with a two-pump, one-probe technique. The experiment is simulated with a rate-equation model describing the energy transfer between a population of hot carriers and the lattice. An energy transfer rate proportional to the temperature difference is found to be consistent with the experimental data while an energy transfer independent of the temperature difference is not. This contrasts with the situation in crystalline silicon. The measured cooling rates are sufficient to explain the difficulty in observing avalanche effects in amorphous silicon.

引用

页码：245 / 250

页数：6

共 50 条

[1] Hot electrons in amorphous silicon
Phys Rev Lett, 16 (2984):
[2] HOT-ELECTRONS IN AMORPHOUS-SILICON
JUSKA, G
ARLAUSKAS, K
KOCKA, J
HOHEISEL, M
CHABLOZ, P
PHYSICAL REVIEW LETTERS, 1995, 75 (16) : 2984 - 2987
[3] Subpicosecond hot carrier cooling in amorphous silicon
White, JO
Cuzeau, S
Hulin, D
Vanderhaghen, R
JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 4984 - 4991
[4] EVIDENCE OF COOLING OF HOT ELECTRONS IN SILICON BY A MAGNETIC FIELD
ASKENAZY, S
PORTAL, JC
CLOT, J
COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1969, 268 (16): : 1083 - &
[5] Hot electrons in silicon oxide
Gritsenko, V. A.
PHYSICS-USPEKHI, 2017, 60 (09) : 902 - 910
[6] MOBILITY OF HOT ELECTRONS IN SILICON
LANYON, HPD
PHYSICS LETTERS A, 1971, A 36 (01) : 27 - &
[7] MAGNETORESISTIVITY OF HOT ELECTRONS IN SILICON
ASCHE, M
BONDAR, VM
SARBEI, OG
PHYSICA STATUS SOLIDI, 1969, 31 (02): : K143 - &
[8] ELECTRONS AND HOLES IN AMORPHOUS-SILICON
WEAIRE, D
HOBBS, D
PHILOSOPHICAL MAGAZINE LETTERS, 1993, 68 (04) : 265 - 272
[9] Cooling of electrons in a silicon inversion layer
Prus, O
Reznikov, M
Sivan, U
Pudalov, V
PHYSICAL REVIEW LETTERS, 2002, 88 (01) : 4 - 168014
[10] Plasmon-induced photoexcitation of "hot" electrons and "hot" holes in amorphous silicon photosensitive devices containing silver nanoparticles
Moulin, Etienne Antoine
Paetzold, Ulrich Wilhelm
Pieters, Bart Elger
Reetz, Wilfried
Carius, Reinhard
JOURNAL OF APPLIED PHYSICS, 2013, 113 (14)

← 1 2 3 4 5 →