Hot-carrier reliability of ultra-thin gate oxide CMOS

被引：2
|
作者：
Momose, HS
Nakamura, S
Ohguro, T
Yoshitomi, T
Morifuji, E
Morimoto, T
Katsumata, Y
Iwai, H
机构：
[1] Toshiba Corp, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
[2] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源：
SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 11期
关键词：
D O I：
10.1016/S0038-1101(00)00101-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot-carrier degradation on electrical characteristics of MOSFETs in the direct-tunneling regime of the gate oxide was investigated under a wide range of conditions, namely stress bias, oxide thickness, gate length, and channel-type dependence. It was confirmed that the transconductance degradation of n-MOSFETs with thinner gate oxides is smaller than that of thicker gate oxide MOSFETs, in spite of larger gate direct-tunneling leakage current and larger hot-carrier generation. For p-MOSFETs, little degradation was observed under all conditions of stress bias, oxide thickness, and gate length. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：2035 / 2044
页数：10
相关论文
共 50 条
  • [21] Ultra-thin gate dielectric reliability projections
    Moosa, M
    Haggag, A
    Liu, N
    Kalpat, S
    Kuffler, M
    Menke, D
    Abramowitz, P
    Ramón, ME
    Tseng, HH
    Luo, TY
    Lim, S
    Grudowski, P
    Jiang, J
    Min, BW
    Weintraub, C
    Chen, J
    Wong, S
    Paquette, C
    Anderson, G
    Tobin, PJ
    White, BE
    Mendicino, M
    2005 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, 2005, : 129 - 133
  • [22] Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate
    Lu, Q
    Takeuchi, H
    Lin, R
    King, TJ
    Hu, CM
    Onishi, K
    Choi, R
    Kang, CS
    Lee, JC
    40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, : 429 - 430
  • [23] Ultra-thin gate oxides - Performance and reliability
    Iwai, H
    Momose, HS
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 163 - 166
  • [24] Reliability of ultra-thin oxides in CMOS circuits
    Stathis, JH
    Linder, BP
    Rodríguez, R
    Lombardo, S
    MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) : 1353 - 1360
  • [25] PERFORMANCE AND HOT-CARRIER RELIABILITY OF DEEP-SUBMICROMETER CMOS
    CHAN, TY
    GAW, H
    1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 71 - 74
  • [26] Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology
    Lee, DY
    Lin, HC
    Chen, CL
    Huang, TY
    Wang, TH
    Lee, TL
    Chen, SC
    Liang, MS
    2003 8TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE, 2003, : 77 - 80
  • [27] A study of hot-carrier degradation in n- and p-MOSFETS with ultra-thin gate oxides in the direct-tunneling regime
    Momose, HS
    Nakamura, S
    Ohguro, T
    Yoshitomi, T
    Morifuji, E
    Morimoto, T
    Katsumata, Y
    Iwai, K
    INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 453 - 456
  • [28] Hot-carrier reliability in submicrometer 40v LDMOS transistors with thick gate oxide
    Chen, JF
    Wu, KM
    Lin, KW
    Su, YK
    Hsu, SL
    2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 560 - 564
  • [29] Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics
    He, YD
    Xu, MZ
    Tan, CH
    SOLID-STATE ELECTRONICS, 2005, 49 (01) : 57 - 61
  • [30] HOT-CARRIER DEPENDENT RADIATION EFFECTS - NEW RELIABILITY ISSUE FOR THIN OXIDE DEVICES
    DAS, NC
    NATHAN, V
    MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 277 - 280
12345