Synthesis, morphology and random laser action of ZnO nanostructures

被引:30
|
作者
Miao, L.
Tanemura, S. [1 ]
Ieda, Y.
Tanemura, M.
Hayashi, Y.
Yang, H. Y.
Lau, S. P.
Tay, B. K.
Cao, Y. G.
机构
[1] Nagoya Inst Technol, Grad Sch Engn, Dept Environm Technol, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Japan Fine Ceram Ctr, Mat R&D Lab, Atsuta Ku, Nagoya, Aichi 4568587, Japan
[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[4] Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China
关键词
evaporation and sublimation; zinc oxide; nanostructure; semiconducting surfaces; random lasing; SILICON SUBSTRATE; ULTRAVIOLET; EMISSION; FILMS;
D O I
10.1016/j.susc.2006.12.011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Three-dimensional (3-D) ZnO random-wall nanostructures and one-dimensional (I-D) ZnO nanorods were prepared on silicon substrates by a simple solid-vapour phase thermal sublimation technique. Optical pumped random lasing has been observed in the ZnO random-wall arrays with a threshold intensity of 0.38 MW/cm(2) in the emission wavelength from 380 to 395 nm. The optical gain was attributed to the closed-loop scattering and light amplification of the ZnO random-wall. The experimental result suggests that the morphology of nanostructure is the key factor to effect random lasing. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:2660 / 2663
页数:4
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