Influence of crystalline damage on morphological and optical properties of silicon nanowires

被引：4

作者：

Fellahi, O. ^{[1
]}

Hadjersi, T. ^{[1
]}

Maamache, M. ^{[2
]}

Bouanik, S. ^{[1
]}

Manseri, A. ^{[1
]}

Guerbous, L. ^{[3
]}

机构：

[1] UDTS, Algiers, Algeria

[2] Univ Setif, Lab Phys Quant & Systemes Dynam, Setif, Algeria

[3] CRNA, Algiers, Algeria

来源：

OPTICAL MATERIALS | 2010年 / 32卷 / 07期

关键词：

Silicon nanowires; Electroless etching; Crystalline damage; Ion implantation; SI NANOWIRES; FABRICATION; SURFACE;

D O I：

10.1016/j.optmat.2010.02.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the effect of crystalline damage on the morphological and optical properties of silicon nanowires (SiNWs) formed by electroless etching. Ag nanoparticles were deposited on p-type Si wafers by electroless metal deposition (EMD). Then, the wafers were etched in HF/H2O2 solution for 15 min at 50 degrees C. The damage was previously introduced in silicon wafers by phosphorus implantation. Different damage levels were obtained by varying the dose and the energy of phosphorus ions implantation. The morphological and optical properties were studied using scanning electron microscope (SEM), spectroscopy of photoluminescence and reflectance. (C) 2010 Elsevier B.V. All rights reserved:

引用

页码：768 / 771

页数：4

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