Basal and non-basal dislocations in deformed Aluminium Nitride

被引：0
|
作者：
Feregotto, V [1 ]
George, A [1 ]
Michel, JP [1 ]
机构：
[1] Ecole Mines, CNRS, URA 155, Phys Mat Lab, F-54042 Nancy, France
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 | 1997年 / 157期
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中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Several kinds of dislocations were identified by TEM in AlN polycrystals strained by 10 % in compression above 1820 K a dislocations were seen to be (i) undissociated, (ii) dissociated by glide in two Shockley partials or (iii) dissociated by glide and climb in two Frank-Shockley partials. In the latter two cases, the stacking fault was in (0001). (c+a) dislocations were seldom observed. They could glide in {10<(1)over bar 0>} prismatic planes rather than in {11<(2)over bar 2>} second order pyramidal planes.
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页码：99 / 102
页数：4
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