SILICON HIGH-DENSITY CAPACITORS FOR POWER DECOUPLING APPLICATIONS

被引：0
|
作者：
Voiron, Frederic [1 ]
Fourneaud, Ludovic [1 ]
机构：
[1] IPDiA, Res & Dev, Caen, France
来源：
2015 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP) | 2015年
关键词：
silicon capacitor; reliability; temperature; power; parasitic;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Capacitors linearity and reliability at high temperature are essential for embedded Point of Load regulation applications. RL parasitic are also becoming crucial for high frequency regulators. In that perspective, we present a silicon-integrated capacitor technology enhanced for high temperature linearity and reliability. A layout approach is proposed to optimize the capacitor RL parasitic to level equivalent to best known technologies (Multilayer Ceramic Capacitors) with better frequency stability.
引用
收藏
页码：48 / 51
页数：4
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