970-nm ridge waveguide diode laser bars for high power DWBC systems

被引:2
|
作者
Wilkens, Martin [1 ]
Erbert, Goetz [1 ,2 ]
Wenzel, Hans [1 ]
Knigge, Andrea [1 ]
Crump, Paul [1 ]
Maassdorf, Andre [1 ]
Fricke, Joerg [1 ]
Ressel, Peter [1 ]
Strohmaier, Stephan [2 ]
Schmidt, Berthold [2 ]
Traenkle, Guenther [1 ]
机构
[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Berlin, Germany
[2] TRUMPF GmbH Co KG, Ditzingen, Germany
来源
关键词
diode laser; ridge waveguide laser; high power; single-spatial mode; external wavelength tuning;
D O I
10.1117/12.2289870
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Diode lasers are key components in material processing laser systems. While mostly used as pump sources for solid state or fiber lasers, direct diode laser systems using dense wavelength multiplexing have come on the market in recent years. These systems are realized with broad area lasers typically, resulting in beam quality inferior to disk or fiber lasers. We will present recent results of highly efficient ridge waveguide (RW) lasers, developed for dense-wavelength-beamcombining (DWBC) laser systems expecting beam qualities comparable to solid state laser systems and higher power conversion efficiencies (PCE). The newly developed RW lasers are based on vertical structures with an extreme double asymmetric large optical cavity. Besides a low vertical divergence these structures are suitable for RW-lasers with (10 mu m) broad ridges, emitting in a single mode with a good beam quality. The large stripe width enables a lateral divergence below 10 degrees (95 % power content) and a high PCE by a comparably low series resistance. We present results of single emitters and small test arrays under different external feedback conditions. Single emitters can be tuned from 950 nm to 975 nm and reach 1 W optical power with more than 55 % PCE and a beam quality of M-2 < 2 over the full wavelength range. The spectral width is below 30 pm FWHM. 5 emitter arrays were stabilized using the same setup. Up to now we reached 3 W optical power, limited by power supply, with 5 narrow spectral lines.
引用
收藏
页数:7
相关论文
共 50 条
  • [31] Suppression of matrix degradation and amelioration of disc degeneration by a 970-nm diode laser via inhibition of the p38 MAPK pathway in a rabbit model
    Zhang, Jingyue
    Sun, Juan
    Chen, Dezhi
    Kang, Jiyu
    Peng, Chuan
    Chang, Xiaotao
    Zhou, Huacheng
    LASERS IN MEDICAL SCIENCE, 2023, 38 (01)
  • [32] High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm
    Kallenbach, S
    Kelemen, MT
    Aidam, R
    Lösch, R
    Kaufel, G
    Mikulla, M
    Weimann, G
    NOVEL IN-PLANE SEMICONDUCTOR LASERS IV, 2005, 5738 : 406 - +
  • [33] Fundamental spatial mode high power 808 nm double trench wide ridge waveguide laser
    Liu, Shangjun
    Li, Zhiwei
    Zhou, Shuai
    Luo, Xiaoshun
    Meng, Yulin
    Wu, Wei
    Feng, Chen
    Zhang, Jing
    OPTICS COMMUNICATIONS, 2024, 564
  • [34] Suppression of matrix degradation and amelioration of disc degeneration by a 970-nm diode laser via inhibition of the p38 MAPK pathway in a rabbit model
    Jingyue Zhang
    Juan Sun
    Dezhi Chen
    Jiyu Kang
    Chuan Peng
    Xiaotao Chang
    Huacheng Zhou
    Lasers in Medical Science, 38
  • [35] High performance 660nm InGaP/AlGaInP quantum well metal cladding ridge waveguide laser diode
    Sun, D
    Treat, DW
    Bour, DP
    ELECTRONICS LETTERS, 1996, 32 (16) : 1488 - 1490
  • [36] High Power 970 nm Semiconductor Laser With A Tunable Grating External Cavity
    Su P.
    Gao X.
    Zhang Y.
    Zhao R.
    Fu D.
    Bo B.
    Faguang Xuebao/Chinese Journal of Luminescence, 2023, 44 (04): : 664 - 672
  • [37] Reliability of high power diode laser bars in industrial applications
    Wolff, D
    Bonati, G
    Hennig, P
    Voelckel, H
    High-Power Diode Laser Technology and Applications III, 2005, 5711 : 66 - 72
  • [38] Advances in Bonding Technology for High Power Diode Laser Bars
    Wang, Jingwei
    Li, Xiaoning
    Hou, Dong
    Feng, Feifei
    Liu, Yalong
    Liu, Xingsheng
    COMPONENTS AND PACKAGING FOR LASER SYSTEMS, 2015, 9346
  • [39] Current expansion of high-power diode laser bars
    Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
    Qiangjiguang Yu Lizishu, 2007, 4 (529-532):
  • [40] Influence of temperature on “Smile” in high power diode laser bars
    Wang S.-N.
    Zhang P.
    Xiong L.-L.
    Nie Z.-Q.
    Wu D.-H.
    Liu X.-S.
    1600, Chinese Optical Society (45):