Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

被引：33
|
作者：
Park, Jun-Young [1 ]
Moon, Dong-Il [1 ]
Seol, Myeong-Lok [1 ]
Kim, Choong-Ki [1 ]
Jeon, Chang-Hoon [1 ]
Bae, Hagyoul [1 ]
Bang, Tewook [1 ]
Choi, Yang-Kyu [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
Degradation; electrical annealing; gate-all-around (GAA); hot-carrier injection (HCI); Joule heat; MOSFET; nanowire; reliability; self-curable; INTERFACE TRAPS;
D O I：
10.1109/TED.2015.2513744
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are recovered or further enhanced within a short time of 1 ms. Selecting a proper range of repair voltage is very important to maximize the annealing effects and minimize the extra damages caused by excessive high temperature. The repairing voltage is related to the resistance of the poly-Si gate according to the device scaling.
引用
收藏
页码：910 / 915
页数：6
相关论文
共 31 条
  • [1] Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs
    Choi, Jin Hyung
    Han, Jin-Woo
    Yu, Chong Gun
    Park, Jong Tae
    [J]. MICROELECTRONICS RELIABILITY, 2014, 54 (9-10) : 2325 - 2328
  • [2] Time Evolution of DIBL in Gate-All-Around Nanowire MOSFETs During Hot-Carrier Stress
    Gupta, Anshul
    Gupta, Charu
    Veloso, Anabela
    Parvais, Bertrand
    Dixit, Abhisek
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (06) : 2641 - 2646
  • [3] Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs
    Choi, Jin Hyung
    Park, Jong Tae
    [J]. MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) : 1438 - 1441
  • [4] Self-heating effects and hot carrier degradation in In0.53Ga0.47As gate-all-around MOSFETs
    Srinivas, P. S. T. N.
    Kumar, Arun
    Jit, Satyabrata
    Tiwari, Pramod Kumar
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (06)
  • [5] Assessment of hot carrier stress induced threshold voltage shift in gate-all-around MOSFETs
    Kumar, Pankaj
    Koley, Kalyan
    Goswami, Rupam
    Maurya, Ashish
    Kumar, Subindu
    [J]. 2022 IEEE 19TH INDIA COUNCIL INTERNATIONAL CONFERENCE, INDICON, 2022,
  • [6] Origin and Implications of Hot Carrier Degradation of Gate-all-around nanowire III-V MOSFETs
    Shin, SangHoon
    Wahab, Muhammad A.
    Masuduzzaman, Muhammad
    Si, Mengwei
    Gu, Jiangjiang
    Ye, P. D.
    Alam, Muhammad A.
    [J]. 2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [7] Hot-Carrier Reliability of Gate-All-Around MOSFET for RF/Microwave Applications
    Gautam, Rajni
    Saxena, Manoj
    Gupta, R. S.
    Gupta, Mridula
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2013, 13 (01) : 245 - 251
  • [8] Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs
    Park, Jun-Young
    Yun, Dae-Hwan
    Choi, Yang-Kyu
    [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (12) : 1909 - 1912
  • [9] An Explicit Continuous Analytical Model for Gate All Around (GAA) MOSFETs Including the Hot-Carrier Degradation Effects
    Abdi, M. A.
    Djeffal, F.
    Bentrcia, T.
    Arar, D.
    [J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (10) : 9316 - 9320
  • [10] A Comparative Study on Hot-Carrier Injection in 5-Story Vertically Integrated Inversion-Mode and Junctionless-Mode Gate-All-Around MOSFETs
    Kim, Seong-Yeon
    Lee, Byung-Hyun
    Hur, Jae
    Park, Jun-Young
    Jeon, Seung-Bae
    Lee, Seung-Wook
    Choi, Yang-Kyu
    [J]. IEEE ELECTRON DEVICE LETTERS, 2018, 39 (01) : 4 - 7
1234