Tb2O3 thin films: An alternative candidate for high-k dielectric applications

被引：17
|
作者：
Gray, Nathan W. [1 ]
Prestgard, Megan C. [1 ]
Tiwari, Ashutosh [1 ]
机构：
[1] Univ Utah, Dept Mat Sci & Engn, Nanostruct Mat Res Lab, Salt Lake City, UT 84112 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 22期
基金：
美国国家科学基金会;
关键词：
GATE DIELECTRICS;
D O I：
10.1063/1.4903072
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We are reporting the growth and structural, optical, and dielectric properties of Tb2O3, a relatively unexplored high-k dielectric material. A pulsed-laser deposition technique was used to grow Tb2O3 thin-films on four different substrates: Si(100), SrTiO3(100), LaAlO3(100), and MgO(100). High-resolution X-ray diffraction and transmission electron microscopy results confirmed that film growth in an oxygen-rich (10(-1) Torr) environment yields nearly single-crystal C-phase films, while a low-oxygen (10(-6) Torr) environment growth results in the formation of monoclinic polycrystalline B-phase films. Optical transmission measurements showed that the bandgap of Tb2O3 is direct in nature with a value of 2.8 eV and 3.4 eV for the cubic and monoclinic phases, respectively. By measuring the capacitance of test devices, quite high dielectric constants of 13.5 and 24.9 were obtained for the B- and C-phase Tb2O3 films, respectively. (C) 2014 AIP Publishing LLC.
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页数：3
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