Effects of Bi4Ti3O12-doped on the electrical properties of low breakdown voltage ZnO varistors

被引：0
|
作者：
Zhang, TJ [1 ]
Yang, XR [1 ]
机构：
[1] Hubei Univ, Sch Phys & Elect Technol, Wuhan 430062, Peoples R China
来源：
INTERNATIONAL CONFERENCE ON SENSORS AND CONTROL TECHNIQUES (ICSC 2000) | 2000年 / 4077卷
关键词：
Bi4Ti3O12; ZnO varistors; electrical properties; breakdown voltage; and leakage current; nonlinear coefficient;
D O I：
10.1117/12.385524
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The regularity of the effect of Bi4Ti3O12-doped on the electrical properties of low voltage ZnO varistor was studied. The effects of annealing temperature on the electric characteristics of samples were discussed and the mechanism of Bi4Ti3O12- doped was analyzed. It is found that the electric properties of Bi4Ti3O12-doped samples are better than Bi2O3- and TiO2- doped samples, and the samples of Bi4T3O12-doped can overcome the weakness of Bi2O3 volatilization at high temperature. For 0.5mol% Bi4Ti3O12-doped samples sintered at 1280 degrees C for 2h., the electric properties were that V-ImA= 45v, a >32, I-L < 3 mu A.
引用
收藏
页码：514 / 517
页数：4
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