Effect of Bi2O3 doping on the electrical characteristics of Al-doped ZnO varistors with low residual voltage

被引：0
|
作者：
Long, Wangcheng [1 ]
He, Jinliang [1 ]
Hu, Jun [1 ]
Liu, Jun [1 ]
机构：
[1] Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China
来源：
2010 ANNUAL REPORT CONFERENCE ON ELECTRICAL INSULATION AND DIELECTIC PHENOMENA | 2010年
关键词：
NONLINEARITY; IMPROVEMENT; CERAMICS; OXIDE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of Bi2O3 doping on the electrical characteristics of Al-doped ZnO varistors were studied. The electrical characteristics and the microstructural parameters of the varistor samples with various content of Bi2O3 additive were investigated. With the amount of the doped Bi2O3 increased, the leakage currents of the Al-doped ZnO varistors are inhibited obviously. In addition, their breakdown electric fields decrease and their nonlinear coefficients increase accordingly. The XRD patterns show that the Bi-rich phase changes remarkably in the varistor samples as the delta-Bi2O3 are decreasing and the BiO2-x phase are increasing. The effects of Bi2O3 doping on the electrical characteristics of the Al-doped ZnO varistors are discussed based on the XRD patterns.
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页数：4
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