Nanopatterning of Si(111) surfaces by atomic force microscope scratching of an organic monolayer

被引:19
|
作者
Zhang, Y
Balaur, E
Maupai, S
Djenizian, T
Boukherroub, R
Schmuki, P
机构
[1] Univ Erlangen Nurnberg, Dept Mat Sci, D-91058 Erlangen, Germany
[2] Ecole Polytech, PMC, F-91128 Palaiseau, France
关键词
copper electroless deposition; AFM; organic monolayer; nanopatterning; AES surface analysis;
D O I
10.1016/S1388-2481(03)00052-3
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this work, we demonstrate selective electroless deposition of Cu into nanoscratches produced on n-type Si(111) surfaces covered with an organic monolayer. The organic layer (undecylenic acid) was covalently attached to a hydrogen-terminated Si surface. The nanosize scratches were produced with an atomic force microscope (AFM) in contact mode using a diamond-coated tip. Copper was deposited in the scratched regions with an electroless (immersion plating) approach using a 0.05 M CuSO4 + 1% HF electrolyte. The results show clearly that the organic layer can be used as a mask for the deposition of Cu. Optimization of the electrochemical parameters, leads to a very high selectivity and uniform and well-defined nanostructures. This process represents a novel approach for a direct patterning of Si surfaces using an immersion plating reaction. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:337 / 340
页数:4
相关论文
共 50 条
  • [41] Glass fracture surfaces seen with an atomic force microscope
    Wunsche, C
    Radlein, E
    Frischat, GH
    FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1997, 358 (1-2): : 349 - 351
  • [42] Glass fracture surfaces seen with an atomic force microscope
    C. Wünsche
    Edda Rädlein
    Günther Heinz Frischat
    Fresenius' Journal of Analytical Chemistry, 1997, 358 : 349 - 351
  • [43] Studies of surfaces at the nanometer scale with the Atomic Force Microscope
    de Carvalho Lopes, Gerson Anderson
    da Fonseca Filho, Henrique Duarte
    Maguina Zamora, Robert Ronald
    ESTACAO CIENTIFICA-UNIFAP, 2012, 2 (02): : 1 - 9
  • [44] On the roughness of perfectly flat H-Si(111) surfaces an atomic force microscopy approach
    Ramonda, M
    Dumas, P
    Salvan, F
    SURFACE SCIENCE, 1998, 411 (1-2) : L839 - L843
  • [45] Atomic force microscopy study of the early stages of Sn phase separation on Si(111) surfaces
    Hu, Q
    Zinke-Allmang, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (03): : 1023 - 1026
  • [46] Atomic Structures of a Monolayer of AlAs, GaAs, and InAs on Si(111)
    Lee, Geunjung
    Yoon, Young-Gui
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (02) : 251 - 254
  • [47] ATOMIC-STRUCTURE OF ONE MONOLAYER OF GAAS ON SI(111)
    NORTHRUP, JE
    PHYSICAL REVIEW B, 1988, 37 (14): : 8513 - 8515
  • [48] FIM, RHEED STUDIES ON ATOMIC STRUCTURE OF SI(111) AND SI(111)-AG SURFACES
    PARK, TS
    CHUNG, CI
    JUNG, SM
    JEON, DZ
    JOURNAL DE PHYSIQUE, 1988, 49 (C-6): : 275 - 280
  • [49] FABRICATION OF SI NANOSTRUCTURES WITH AN ATOMIC-FORCE MICROSCOPE
    SNOW, ES
    CAMPBELL, PM
    APPLIED PHYSICS LETTERS, 1994, 64 (15) : 1932 - 1934
  • [50] Atomistic Modeling of Scratching Process based on Atomic Force Microscope: Effects of Temperature.
    Khan, Hanif Muhammad
    Kim, Sung-Gaun
    INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, 2010, : 134 - 135