Heteroepitaxial growth of In2O3 on YSZ (100) single crystal surface

被引：0

作者：

Orita, M ^{[1
]}

Ohta, H ^{[1
]}

Tanji, H ^{[1
]}

Hosono, H ^{[1
]}

Kawazoe, H ^{[1
]}

机构：

[1] HOYA Co, Adv Technol Lab, Akishima, Tokyo 1968510, Japan

来源：

FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES | 2000年 / 558卷

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In2O3 films were deposited on YSZ (001) single crystal surface at 800 degrees C at an oxygen pressure of 14 Pa by pulsed laser deposition (PLD) method. A heteroepitaxial relationship between the film and the substrate was seen in TEM photographs and X-ray diffraction measurements. The omega locking curve full width of half maximum (FWHM) of the In2O3 (004) x-ray diffraction was 0.06 degrees. Film conductivities were similar to 10 S/cm or less, while carriers on the order of 10(18)/cm(3) were generated.

引用

页码：399 / 402

页数：4

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