Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

被引：39
|
作者：
Rong, Xin [1 ]
Wang, Xinqiang [1 ,2 ]
Chen, Guang [1 ]
Pan, Jianhai [1 ]
Wang, Ping [1 ]
Liu, Huapeng [1 ]
Xu, Fujun [1 ]
Tan, Pingheng [3 ]
Shen, Bo [1 ,2 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 93卷
基金：
中国国家自然科学基金;
关键词：
Raman scattering; Aluminium nitride; Molecular beam epitaxy; PHONON DEFORMATION POTENTIALS; RAMAN-SCATTERING; GAN; TEMPERATURE; LAYER;
D O I：
10.1016/j.spmi.2016.02.050
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Residual stress in AlN films grown by molecular beam epitaxy (MBE) has been studied by Raman scattering spectroscopy. A strain-free Raman frequency and a biaxial stress coefficient for E-2(high) mode are experimentally determined to be 657.8 +/- 0.3 cm(-1) and 2.4 +/- 0.2 cm(-1) /GPa, respectively. By using these parameters, the residual stress of a series of AlN layers grown under different buffer layer conditions has been investigated. The residual compressive stress is found to be obviously decreased by increasing the Al/N beam flux ratio of the buffer layer, indicating the generation of tensile stress due to stronger coalescence of AlN grains, as also confirmed by the in-situ reflection high energy electron diffraction (RHEED) monitoring observation. The stronger coalescence does lead to improved quality of AlN films as expected. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：27 / 31
页数：5
相关论文
共 50 条
  • [41] Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy
    Lutsenko, E., V
    Rzheutski, M., V
    Vainilovich, A. G.
    Svitsiankou, I. E.
    Nagorny, A., V
    Shulenkova, V. A.
    Yablonskii, G. P.
    Alekseev, A. N.
    Petrov, S., I
    Solovev, Ya A.
    Pyatlitski, A. N.
    Zhigulin, D., V
    Solodukha, V. A.
    QUANTUM ELECTRONICS, 2019, 49 (06) : 540 - 544
  • [42] Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates
    Izhnin, I. I.
    Izhnin, A. I.
    Savytskyy, H. V.
    Vakiv, M. M.
    Stakhira, Y. M.
    Fitsych, O. E.
    Yakushev, M. V.
    Sorochkin, A. V.
    Sabinina, I. V.
    Dvoretsky, S. A.
    Sidorov, Yu G.
    Varavin, V. S.
    Pociask-Bialy, M.
    Mynbaev, K. D.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (03)
  • [43] Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates
    Ueno, Kohei
    Ohta, Jitsuo
    Fujioka, Hiroshi
    Fukuyama, Hiroyuki
    APPLIED PHYSICS EXPRESS, 2011, 4 (01)
  • [44] Comparison of the microstructure of AlN films grown by MOCVD and by PLD on sapphire substrates
    Li, YX
    SalamancaRiba, L
    Talyan, V
    Venkatesan, T
    Wongchigul, C
    Zhou, P
    Tang, X
    Spencer, MG
    III-V NITRIDES, 1997, 449 : 453 - 458
  • [45] On the Growth of High-Temperature Epitaxial AlN (AlGaN) Layers on Sapphire Substrates by Ammonia Molecular Beam Epitaxy
    Mayboroda I.O.
    Ezubchenco I.S.
    Grishchenko Y.V.
    Presniakov M.Y.
    Zanaveskin M.L.
    Journal of Surface Investigation, 2017, 11 (06): : 1135 - 1144
  • [46] High Quality AlN with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy
    Ren Fan
    Hao Zhi-Biao
    Zhang Chen
    Hu Jian-Nan
    Luo Yi
    CHINESE PHYSICS LETTERS, 2010, 27 (06)
  • [47] Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy
    Shen, X. Q.
    Okumura, H.
    Furuta, K.
    Nakamura, N.
    APPLIED PHYSICS LETTERS, 2006, 89 (17)
  • [48] Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates
    Wang, Q.
    Zhao, S.
    Connie, A. T.
    Shih, I.
    Mi, Z.
    Gonzalez, T.
    Andrews, M. P.
    Du, X. Z.
    Lin, J. Y.
    Jiang, H. X.
    APPLIED PHYSICS LETTERS, 2014, 104 (22)
  • [49] High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy
    Li, LK
    Turk, B
    Wang, WI
    Syed, S
    Simonian, D
    Stormer, HL
    APPLIED PHYSICS LETTERS, 2000, 76 (06) : 742 - 744
  • [50] Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy
    Feng, Zhe Chuan
    Xie, Deng
    Nafisa, Manika Tun
    Lin, Hao-Hsiung
    Lu, Weijie
    Chen, Jin-Ming
    Yiin, Jeffrey
    Chen, Kuei-Hsien
    Chen, Li-Chyong
    Klein, Benjamin
    Ferguson, Ian T.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (05):
12345