Frequency jumps in single chip microwave LC oscillators

被引:2
|
作者
Gualco, Gabriele [1 ]
Grisi, Marco [1 ]
Boero, Giovanni [1 ]
机构
[1] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland
基金
瑞士国家科学基金会;
关键词
RANDOM TELEGRAPH NOISE; FIELD-EFFECT TRANSISTOR; CMOS IMAGE SENSORS; 1/F NOISE; SEMICONDUCTOR-DEVICES; ROOM-TEMPERATURE; SPIN-RESONANCE; PHYSICAL MODEL; BURST NOISE; MOSFETS;
D O I
10.1063/1.4904417
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the experimental observation of oscillation frequency jumps in microwave LC oscillators fabricated using standard complementary metal-oxide-semiconductor technologies. The LC oscillators, operating at a frequency of about 20 GHz, consist of a single turn planar coil, a metal-oxide-metal capacitor, and two cross-coupled metal-oxide-semiconductor field effect transistors used as negative resistance network. At 300 K as well as at 77 K, the oscillation frequency is a continuous function of the oscillator bias voltage. At 4 K, frequency jumps as large as 30 MHz are experimentally observed. This behavior is tentatively attributed to the emission and capture of single electrons from defects and dopant atoms. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:5
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